Stacking faults and interface roughening in semipolar ( 20 2 ̄ 1 ̄ ) single InGaN quantum wells for long wavelength emission
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MOVPE Growth of Semipolar GaN on Patterned Sapphire Wafers: Growth Optimisation and InGaN Quantum Wells
We are able to achieve two different GaN semipolar surfaces by growing on patterned sapphire substrates: (101̄1) GaN on (112̄3) sapphire and (112̄2) on (101̄2). By this approach, the growth of a coalesced semipolar layer on a large area of about two inches diameter is possible. Well known from the c-plane direction, an in-situ deposited SiN interlayer could reduce the defect density also in semipol...
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